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DMN4036LK3
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
40
?
?
?
?
?
?
0.5
± 100
V
μ A
nA
I D = 250 μ A, V GS = 0V
V DS = 40V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
1.0
?
?
?
?
?
0.026
0.049
19.6
0.96
112
926
3.0
0.036
0.061
?
1.1
?
?
V
?
S
V
ns
nC
I D = 250 μ A, V DS = V GS
V GS = 10V, I D = 12A
V GS = 4.5V, I D = 6A
V DS = 15V, I D = 12A
I S = 12A, V GS = 0V
I S = 12A, di/dt = 100A/ μ s
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
C iss
C oss
C rss
Q g
Q g
?
?
?
?
?
453
79.1
40.5
4.9
9.2
?
?
?
?
?
pF
pF
pF
nC
nC
V DS = 20V, V GS = 0V
f = 1MHz
V GS = 4.5V
V DS = 20V
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Q gs
Q gd
t D(on)
?
?
?
1.7
2.7
3.2
?
?
?
nC
nC
ns
V GS = 10V
I D = 12A
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
t r
t D(off)
t f
?
?
?
11.7
11.6
9.5
?
?
?
ns
ns
ns
V DD = 20V, V GS = 10V
I D = 12A, R G ? 6.0 Ω
Notes:
8. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
DMN4036LK3
Document number: DS32122 Rev. 2 - 2
4 of 8
www.diodes.com
March 2010
? Diodes Incorporated
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